Emergence of Rashba spin valley state in two-dimensional strained bismuth oxychalcogenides Bi2O2Se

Umar, Muhammad Darwis and Falihin, Lalu Dalilul and Lukmantoro, Arief and Harsojo, Harsojo and Absor, Moh. Adhib Ulil (2023) Emergence of Rashba spin valley state in two-dimensional strained bismuth oxychalcogenides Bi2O2Se. PHYSICAL REVIEW B, 108 (3).

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Abstract

The experimental evidence of the ultrahigh electron mobility and strong spin-orbit coupling in the two-dimensional (2D) layered bismuth-based oxyselenide, Bi2O2Se, makes it a potential material for spintronic devices. However, its spin-related properties have not been extensively studied due to the centrosymmetric nature of its crystal structure. By using first-principles density-functional theory calculation, this study reports the emergence of Rashba-spin-valley states in Bi2O2Se monolayer (ML). Breaking the crystal inversion symmetry of Bi2O2Se ML using an external electric field enables the Rashba-spin-valley formation, causing the appearance of the Rashba-type splitting around the Gamma valley and spin-valley coupling at the D valleys located near the middle of Gamma - M line. In addition to the typical Rashba-type spin textures around the Gamma valley, the study also observed in-plane unidirectional spin textures around the D valleys, which is a rare phenomenon in 2D materials. The observed Rashba-spin-valley states are driven by the lowering point group symmetry of the crystal from D-4h to C-4v enforced by the electric field, as clarified through (k) over right arrow center dot (p) over right arrow model derived from symmetry analysis. More importantly, tuning the Rashba and spin-valley states by using biaxial strain offers a promising route to regulate the spin textures and spin splitting preventing the electron from back-scattering in spin transport. Finally, we proposed a more realistic system, namely, Bi2O2SeML/SrTiO3 (001) heterointerface that supports the strong Rashba-spin-valley states and highlighting the potential of the Bi2O2Se ML for future spintronics and valleytronics-based devices.

Item Type: Article
Uncontrolled Keywords: Electronic structure; First-principles calculations; Spin-orbit coupling; Spintronics; Valleytronics
Subjects: Q Science > QC Physics
Divisions: Faculty of Mathematics and Natural Sciences > Physics Department
Depositing User: Sri JUNANDI
Date Deposited: 28 Nov 2024 01:17
Last Modified: 28 Nov 2024 01:17
URI: https://ir.lib.ugm.ac.id/id/eprint/11716

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