Efficient EV Charging using Optimal DC-DC DAB 400 v to 115 v with GaN GS66508T

This research aims to develop an efficient dc-dc dual active bridge (DAB) converter circuit for charging electric vehicles (EVs) from 400 V to 115 V, focusing on improving efficiency and optimizing design using GaN transistors. The selection of GaN transistor GS66508T, a 650 V enhancement mode power transistor with superior specifications, such as RDS(on) 50 mΩ, IDS(max) 30 A, the need for simple gates (0 V to 6 V), transient-resistant gates (-20 / +10 V), and very high switching frequencies (> 10 MHz), took center stage in finding effective solutions for faster and more efficient EV charging. The successful implementation in the simulation design of the DAB dc-dc converter resulted in optimal performance with a stable output voltage at 113.8 V, an output current of 12.4 A, an output power of 1410.67 W, and an overall efficiency of 97.46, strengthening the reliability and efficiency of DAB designs for charging electric vehicles. © 2024 IEEE.