Effect of thin film thickness on the electronic properties of wurtzite structure (Zno and gan): A density functional theory study

Darajat, Tin Subekti Zaidah and Ulil Absor, Moh. Adhib (2021) Effect of thin film thickness on the electronic properties of wurtzite structure (Zno and gan): A density functional theory study. Key Engineering Materials, 884 KE. 394 – 404. ISSN 10139826

Full text not available from this repository. (Request a copy)

Abstract

By using first-principle density-functional theory (DFT) calculations supplemented with symmetry analysis, we investigated the effect of thin-film thickness on the electronic properties of non-polar (101̅0) ZnO-wz and GaN-wz. We find that the electronic band structures of thin-film non-polar (101̅0) surface with layer variations from two until ten bilayers show the Rashba spin splitting. Importantly, we revealed that this splitting is found to be strongly anisotropic observed in the valence band maximum (VBM) around the Γ point. We clarified the origin of the anisotropic spin splitting in the electronic band structures by considering the point-group symmetry (PGS) of the present system. We found that the changes of the PGS from C6v (for polar 0001 direction) to Cs (for non-polar (101̅0) direction) are responsible for inducing the anisotropic of the spin splitting. To further confirm the anisotropic splitting, we calculated the Rashba spin splitting parameters for different directions of the k-path. We found that these parameters are different in magnitude for a different direction of the k-path indicating the anisotropic spin splitting quantitatively, which is consistent well with symmetry analysis. Finally, we conclude that the observed Rashba spin splitting in the wurtzite surface structure is promising for spintronics applications. © 2021 Trans Tech Publications Ltd, Switzerland.

Item Type: Article
Additional Information: Cited by: 0
Uncontrolled Keywords: Band structure; Density functional theory; Electronic properties; Gallium nitride; II-VI semiconductors; III-V semiconductors; Surface structure; Thin films; Zinc oxide; Zinc sulfide; Electronic band structure; Non-polar; Point group symmetry; Rashba spin splitting; Spin splittings; Splittings; Surface effect; Symmetry analysis; Thin films-thickness; Wurtzite; Anisotropy
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering > Electrical and Information Technology Department
Depositing User: Sri JUNANDI
Date Deposited: 07 Oct 2024 01:13
Last Modified: 07 Oct 2024 01:13
URI: https://ir.lib.ugm.ac.id/id/eprint/8710

Actions (login required)

View Item
View Item