Novel lead–tin telluride (PbSnTe) thermoelectric material manufactured via horizontal vapour phase growth technique (HVPG)

Sam, Sopheap and Gan Lim, Laurence A. and Thirumalai, Sundararajan and Wiranata, Ardi and Jamasri, Jamasri and Sentanuhady, Jayan and Santos, Gil Nonato C. and Muflikhun, Muhammad Akhsin (2024) Novel lead–tin telluride (PbSnTe) thermoelectric material manufactured via horizontal vapour phase growth technique (HVPG). Manufacturing Letters, 40. 11 – 15. ISSN 22138463

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Abstract

Pb0.33Sn0.67Te is an important semiconductor thermoelectric material. It was successfully synthesized through a HVPG technique. The growth temperature and time are varied in the range of 1000 °C–1200 °C and 4–8 h, respectively. A 2k factorial design of experiments is used to study the effect of material thermoelectric performance (ZT). Investigations revealed that maximum ZT of 0.084 can be achieved at 1200 °C growth temperature of and 4 h anneal time of. The crystals showed high ZT value, which is likely to have contributed to the ZT enhancement. It showed that Pb0.33Sn0.67Te manufactured via HVPG applied for thermoelectric applications. © 2024 Society of Manufacturing Engineers (SME)

Item Type: Article
Additional Information: Cited by: 6
Uncontrolled Keywords: Design of experiments; IV-VI semiconductors; Lead compounds; Narrow band gap semiconductors; Semiconducting tin compounds; Thermoelectric equipment; Thermoelectricity; Effects of materials; Factorial design; Growth techniques; Horizontal vapor phase growth technique; Lead tin tellurides; Surface characteristics; Synthesised; Thermo-Electric materials; Thermoelectric material; Vapor-phase growth; Growth temperature
Subjects: T Technology > TJ Mechanical engineering and machinery
Divisions: Faculty of Engineering > Mechanical and Industrial Engineering Department
Depositing User: Rita Yulianti Yulianti
Date Deposited: 10 Apr 2025 00:33
Last Modified: 10 Apr 2025 00:33
URI: https://ir.lib.ugm.ac.id/id/eprint/13156

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